增材制造材料技術團隊 量子功能(néng)材料團隊 功能(néng)薄膜與智構器件團隊 先進(jìn)納米光電材料與器件團隊 全光控半導體材料與器件團隊
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曹鴻濤  研究員  博士生導師
曹鴻濤,研究員,博士生導師
Tel: +86-574-86685161
Fax: +86-574-86685163
E-mail:
H_Cao@nimte.ac.cn   or Advcao@msn.com
學(xué)習經(jīng)曆:
1998年6月,東北大學(xué)畢業,獲學(xué)士學(xué)位。
2001年6月,東北大學(xué)畢業,獲碩士學(xué)位。
2004年6月,中國(guó)科學(xué)院金屬研究所畢業,獲博士學(xué)位。
 
工作經(jīng)曆:
20073月至今,中國(guó)科學(xué)院甯波材料技術與工程研究所先進(jìn)納米材料與器件實驗室副主任,研究員。
 
主要研究方向(xiàng)
主要從事(shì)氧化物材料的内部微觀結構與宏觀性能(néng)的研究,新型氧化物材料與器件的探索、研發(fā)與應用。目前重點研究新型寬禁帶氧化物半導體薄膜、氧化物高K介電薄膜、薄膜場效應晶體管;氧化物智能(néng)電緻變色薄膜材料、電緻變色智能(néng)窗。
 
主要主持的科研項目
  1. 孫喜蓮,曹鴻濤等,“WO3基電緻變色材料的制備及器件的研發(fā)”,浙江省科技廳攻關面(miàn)上項目,課題号“2008C31G3220006”,起(qǐ)止時間:2008.01-2009.12
  2. 曹鴻濤,施媛媛等,“ZnO材料中與缺陷相關的紫外發(fā)光中心的研究“,甯波市自然科學(xué)基金項目,課題号” 2008A610052 “,起(qǐ)止時間:2008.02-2010.02
  3. 萬青,曹鴻濤等,“寬禁帶氧化物半導體納米線的原位摻雜及其器件應用“,浙江省自然科學(xué)基金委重點項目,課題号”Z4080347“,起(qǐ)止時間: 2009.01 - 2011.12
  4. 萬青,曹鴻濤等,”微納透明晶體管和存儲器”,中國(guó)科學(xué)院優秀博士學(xué)位論文、院長(cháng)獎獲得者科研啓動專項資金  
近期發(fā)表的代表性文章
[1] L. Y Liang, Z. M. Liu, H. T. Cao(曹鴻濤), and X. Q. Pan, “Microstructural, optical and electrical properties of SnO thin films prepared on quartz via a two-step method,”ACS Applied Materials & Interfaces, DOI: 10.1021/900838z. (通訊作者)
[2] L. Y. Liang, Z. M. Liu, H. T. Cao(曹鴻濤), Z. Yu, Y. Y. Shi, A. H. Chen, H. Z. Zhang, Y. Q. Fang, and X. L. Sun, 2010, “Phase and optical characterizations of annealed SnO thin films and their p-type TFT applications,” Journal of the Electrochemistry Society, 157, ?H598. (通訊作者)
[3] W. Guo, L. Fu, Y. Zhang, K. Zhang, L. Y. Liang, Z. M. Liu, H. T. Cao(曹鴻濤), and X. Q. Pan, 2010, “Microstructure, optical, and electrical properties of p-type SnO thin films, ” Applied Physics Letters, 96, 042113.
[4] H. Z. Zhang, H. T. Cao(曹鴻濤), A. H. Chen, L. Y. Liang, Z. M. Liu, and Q. Wan, 2010, “Enhancement of electrical performance in In2O3 thin-film transistors by improving the densification and surface morphology of channel layers,” Solid- State Electronics, 54, 479. (通訊作者)
[5] A. H. Chen, H. T. Cao(曹鴻濤), H. Z. Zhang, L. Y. Liang, Z. M. Liu, Z. Yu, and Q. Wan, “Influence of the channel layer thickness on electrical properties of indium zinc oxide thin-film transistor,” Microelectronic Engineering, DOI: 10.1016/j.mee.2009.12.081, (通訊作者)
[6] Y. Y. Shi, Z. Yang, H. T. Cao(曹鴻濤), and Z. M. Liu, 2010, “Controlled c-oriented ZnO nanorod arrays and m-plane ZnO thin film growth on Si substrate by a hydrothermal method,” Journal of Crystal Growth, 312, 568. (通訊作者)
[7] Z. Yang, Y. Y. Shi, X. L. Sun, H. T. Cao(曹鴻濤), H. M. Lu, and X. D. Liu, 2010, “The competition growth of ZnO microrods and nanorods in chemical bath deposition process,” Materials Research Bulletin, 45, 474. (通訊作者)
[8] M. Kobayashi, Y. Ishida, J. I. Hwang, G. S. Song, M. Takizawa, A. Fujimori, Y. Takeda, T. Ohkochi, T. Okane, Y. Saitoh, H. Yamagami, Amita Gupta, H. T. Cao(曹鴻濤), and K. V. Rao, 2009, “Hybridization between the conduction band and 3d orbitals in the oxide-based diluted magnetic semiconductor In2-xVxO3,” Physical Review B, 79, 205203.
[9] Amita Gupta, H. T. Cao(曹鴻濤), K. Parekh and K. V. Rao, 2007, “Room temperature ferromagnetism in TM (V, Cr, Ti) doped In2O3,” Journal of Applied Physics, 101, 09513.
[10] H. T. Cao(曹鴻濤), Z. L. Pei, J. Gong, C. Sun, R. F. Huang, L. S. Wen, 2004, “Preparation and characterization of Al and Mn doped ZnO (ZnO: (Al, Mn)) transparent conducting oxide films,” Journal of Solid State Chemistry, 177, 1480.
[11] H. T. Cao(曹鴻濤), Z. L. Pei, J. Gong, C. Sun, R. F. Huang, L. S. Wen, 2004, “Transparent conductive Al and Mn doped ZnO thin films prepared by DC reactive magnetron sputtering,” Surface&Coatings Technology, 184, 84.
[12] H. T. Cao(曹鴻濤), C. Sun, Z. L. Pei, A. Y. Wang, L. S. Wen, R. J. Hong, X. Jiang, 2004, “Properties of transparent conducting ZnO: Al (ZAO) oxide thin films and its application for molecular organic light-emitting diodes (OLEDs),” Journal of Materials Science: Materials in Electronics, 15, 165.

 

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